Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering

ABSTRACT: In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 10(17) ions cm(-2)) which undergo a tran...

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Detalles Bibliográficos
Autores principales: Basu, Tanmoy, Datta, Debi Prasad, Som, Tapobrata
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3691652/
https://www.ncbi.nlm.nih.gov/pubmed/23782769
http://dx.doi.org/10.1186/1556-276X-8-289
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author Basu, Tanmoy
Datta, Debi Prasad
Som, Tapobrata
author_facet Basu, Tanmoy
Datta, Debi Prasad
Som, Tapobrata
author_sort Basu, Tanmoy
collection PubMed
description ABSTRACT: In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 10(17) ions cm(-2)) which undergo a transition to faceted structures at a higher fluence of 5 × 10(17) ions cm(-2). Facet coarsening takes place at further higher fluences. This transition from ripples to faceted structures is attributed to the shadowing effect due to a height difference between peaks and valleys of the ripples. The observed facet coarsening is attributed to a mechanism based on reflection of primary ions from the facets. In addition, the role of sputtering is investigated (for both the angles) by computing the fractional change in sputtering yield and the evolution of surface roughness. PACS: 81.05.Cy, 81.16.Rf, 61.80.Jh, 87.64.Dz
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spelling pubmed-36916522013-06-25 Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering Basu, Tanmoy Datta, Debi Prasad Som, Tapobrata Nanoscale Res Lett Nano Express ABSTRACT: In this study, we have investigated temporal evolution of silicon surface topography under 500-eV argon ion bombardment for two angles of incidence, namely 70° and 72.5°. For both angles, parallel-mode ripples are observed at low fluences (up to 2 × 10(17) ions cm(-2)) which undergo a transition to faceted structures at a higher fluence of 5 × 10(17) ions cm(-2). Facet coarsening takes place at further higher fluences. This transition from ripples to faceted structures is attributed to the shadowing effect due to a height difference between peaks and valleys of the ripples. The observed facet coarsening is attributed to a mechanism based on reflection of primary ions from the facets. In addition, the role of sputtering is investigated (for both the angles) by computing the fractional change in sputtering yield and the evolution of surface roughness. PACS: 81.05.Cy, 81.16.Rf, 61.80.Jh, 87.64.Dz Springer 2013-06-19 /pmc/articles/PMC3691652/ /pubmed/23782769 http://dx.doi.org/10.1186/1556-276X-8-289 Text en Copyright ©2013 Basu et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Basu, Tanmoy
Datta, Debi Prasad
Som, Tapobrata
Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
title Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
title_full Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
title_fullStr Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
title_full_unstemmed Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
title_short Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
title_sort transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3691652/
https://www.ncbi.nlm.nih.gov/pubmed/23782769
http://dx.doi.org/10.1186/1556-276X-8-289
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AT dattadebiprasad transitionfromripplestofacetedstructuresunderlowenergyargonionbombardmentofsiliconunderstandingtheroleofshadowingandsputtering
AT somtapobrata transitionfromripplestofacetedstructuresunderlowenergyargonionbombardmentofsiliconunderstandingtheroleofshadowingandsputtering

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