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High-speed bipolar phototransistors in a 180 nm CMOS process
Several high-speed pnp phototransistors built in a standard 180 nm CMOS process are presented. The phototransistors were implemented in sizes of 40×40 μm(2) and 100×100 μm(2). Different base and emitter areas lead to different characteristics of the phototransistors. As starting material a p(+) wafe...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier Advanced Technology
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3704397/ https://www.ncbi.nlm.nih.gov/pubmed/23847388 http://dx.doi.org/10.1016/j.optlastec.2012.04.011 |