Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performanc...

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Detalles Bibliográficos
Autores principales: Wyrsch, Nicolas, Choong, Gregory, Miazza, Clément, Ballif, Christophe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2008
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3705464/
https://www.ncbi.nlm.nih.gov/pubmed/27873778
http://dx.doi.org/10.3390/s8084656

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3705464/
https://www.ncbi.nlm.nih.gov/pubmed/27873778
http://dx.doi.org/10.3390/s8084656

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