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Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performanc...

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Detalles Bibliográficos
Autores principales: Wyrsch, Nicolas, Choong, Gregory, Miazza, Clément, Ballif, Christophe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2008
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3705464/
https://www.ncbi.nlm.nih.gov/pubmed/27873778
http://dx.doi.org/10.3390/s8084656
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author Wyrsch, Nicolas
Choong, Gregory
Miazza, Clément
Ballif, Christophe
author_facet Wyrsch, Nicolas
Choong, Gregory
Miazza, Clément
Ballif, Christophe
author_sort Wyrsch, Nicolas
collection PubMed
description Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.
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spelling pubmed-37054642013-07-09 Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors Wyrsch, Nicolas Choong, Gregory Miazza, Clément Ballif, Christophe Sensors (Basel) Article Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode. Molecular Diversity Preservation International (MDPI) 2008-08-08 /pmc/articles/PMC3705464/ /pubmed/27873778 http://dx.doi.org/10.3390/s8084656 Text en © 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland. This article is an open-access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Wyrsch, Nicolas
Choong, Gregory
Miazza, Clément
Ballif, Christophe
Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_full Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_fullStr Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_full_unstemmed Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_short Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors
title_sort performance and transient behavior of vertically integrated thin-film silicon sensors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3705464/
https://www.ncbi.nlm.nih.gov/pubmed/27873778
http://dx.doi.org/10.3390/s8084656
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