Non-volatile memory based on the ferroelectric photovoltaic effect

The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low op...

Descripción completa

Detalles Bibliográficos
Autores principales: Guo, Rui, You, Lu, Zhou, Yang, Shiuh Lim, Zhi, Zou, Xi, Chen, Lang, Ramesh, R., Wang, Junling
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3709492/
https://www.ncbi.nlm.nih.gov/pubmed/23756366
http://dx.doi.org/10.1038/ncomms2990

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3709492/
https://www.ncbi.nlm.nih.gov/pubmed/23756366
http://dx.doi.org/10.1038/ncomms2990

Ejemplares similares