Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection

InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the ener...

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Detalles Bibliográficos
Autores principales: Shi, Zhenwu, Wang, Lu, Zhen, Honglou, Wang, Wenxin, Chen, Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3710230/
https://www.ncbi.nlm.nih.gov/pubmed/23822825
http://dx.doi.org/10.1186/1556-276X-8-310

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3710230/
https://www.ncbi.nlm.nih.gov/pubmed/23822825
http://dx.doi.org/10.1186/1556-276X-8-310

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