Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection

InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the ener...

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Detalles Bibliográficos
Autores principales: Shi, Zhenwu, Wang, Lu, Zhen, Honglou, Wang, Wenxin, Chen, Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3710230/
https://www.ncbi.nlm.nih.gov/pubmed/23822825
http://dx.doi.org/10.1186/1556-276X-8-310
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author Shi, Zhenwu
Wang, Lu
Zhen, Honglou
Wang, Wenxin
Chen, Hong
author_facet Shi, Zhenwu
Wang, Lu
Zhen, Honglou
Wang, Wenxin
Chen, Hong
author_sort Shi, Zhenwu
collection PubMed
description InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum.
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spelling pubmed-37102302013-07-15 Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection Shi, Zhenwu Wang, Lu Zhen, Honglou Wang, Wenxin Chen, Hong Nanoscale Res Lett Nano Express InGaAs/AlGaAs multiple quantum wells used for 4.3 μm mid-wavelength infrared quantum well infrared detectors were grown by molecular beam epitaxy. In composition loss was observed and quantitatively studied by high-resolution X-ray diffraction technology. By this In composition loss effect, the energy band engineering on the photo-response wavelength is not easily achieved. A thin AlGaAs barrier grown at low temperature is used to suppress the In atom desorption, and this growth process was verified to be able to adjust the photo-response wavelength as designed by energy band engineering in the photocurrent spectrum. Springer 2013-07-03 /pmc/articles/PMC3710230/ /pubmed/23822825 http://dx.doi.org/10.1186/1556-276X-8-310 Text en Copyright ©2013 Shi et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Nano Express
Shi, Zhenwu
Wang, Lu
Zhen, Honglou
Wang, Wenxin
Chen, Hong
Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
title Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
title_full Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
title_fullStr Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
title_full_unstemmed Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
title_short Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection
title_sort molecular beam epitaxy growth of peak wavelength-controlled ingaas/algaas quantum wells for 4.3-μm mid-wavelength infrared detection
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3710230/
https://www.ncbi.nlm.nih.gov/pubmed/23822825
http://dx.doi.org/10.1186/1556-276X-8-310
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