Perfect crystals grown from imperfect interfaces

The fabrication of advanced devices increasingly requires materials with different properties to be combined in the form of monolithic heterostructures. In practice this means growing epitaxial semiconductor layers on substrates often greatly differing in lattice parameters and thermal expansion coe...

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Detalles Bibliográficos
Autores principales: Falub, Claudiu V., Meduňa, Mojmír, Chrastina, Daniel, Isa, Fabio, Marzegalli, Anna, Kreiliger, Thomas, Taboada, Alfonso G., Isella, Giovanni, Miglio, Leo, Dommann, Alex, von Känel, Hans
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3721082/
https://www.ncbi.nlm.nih.gov/pubmed/23880632
http://dx.doi.org/10.1038/srep02276

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3721082/
https://www.ncbi.nlm.nih.gov/pubmed/23880632
http://dx.doi.org/10.1038/srep02276

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