InAs-mediated growth of vertical InSb nanowires on Si substrates

In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end,...

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Detalles Bibliográficos
Autores principales: Li, Tianfeng, Gao, Lizhen, Lei, Wen, Guo, Lijun, Pan, Huayong, Yang, Tao, Chen, Yonghai, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3726463/
https://www.ncbi.nlm.nih.gov/pubmed/23883403
http://dx.doi.org/10.1186/1556-276X-8-333

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3726463/
https://www.ncbi.nlm.nih.gov/pubmed/23883403
http://dx.doi.org/10.1186/1556-276X-8-333

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