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Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism
The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both elect...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3728587/ https://www.ncbi.nlm.nih.gov/pubmed/23900459 http://dx.doi.org/10.1038/srep02319 |