Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory

This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and h...

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Detalles Bibliográficos
Autores principales: Yeh, Mu-Shih, Wu, Yung-Chun, Hung, Min-Feng, Liu, Kuan-Cheng, Jhan, Yi-Ruei, Chen, Lun-Chun, Chang, Chun-Yen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3733706/
https://www.ncbi.nlm.nih.gov/pubmed/23875863
http://dx.doi.org/10.1186/1556-276X-8-331

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3733706/
https://www.ncbi.nlm.nih.gov/pubmed/23875863
http://dx.doi.org/10.1186/1556-276X-8-331

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