High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concent...

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Detalles Bibliográficos
Autores principales: Kuo, Cheng-Hsiang, Wu, Jyh-Ming, Lin, Su-Jien, Chang, Wen-Chih
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735493/
https://www.ncbi.nlm.nih.gov/pubmed/23866944
http://dx.doi.org/10.1186/1556-276X-8-327

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735493/
https://www.ncbi.nlm.nih.gov/pubmed/23866944
http://dx.doi.org/10.1186/1556-276X-8-327

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