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High sensitivity of middle-wavelength infrared photodetectors based on an individual InSb nanowire
Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared photodetectors based on a metal–semiconductor-metal (M-S-M) structure. The InSb nanowires were synthesized using an electrochemical method at room temperature. The characteristics of the FET reveal an electron concent...
Autores principales: | Kuo, Cheng-Hsiang, Wu, Jyh-Ming, Lin, Su-Jien, Chang, Wen-Chih |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735493/ https://www.ncbi.nlm.nih.gov/pubmed/23866944 http://dx.doi.org/10.1186/1556-276X-8-327 |
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