Oxygen doping of HTSC and resistive switching in HTSC-based heterostructures

ABSTRACT: The studies of the bipolar resistive switching effect in thin film heterojunctions (YBa(2)Cu(3)O(7−δ)/Ag) and (Nd (2−x)Ce(x)CuO(4−y)/Ag) have exhibited the role of oxygen as a doping element in hole- and electron-doped HTSC compounds.

Detalles Bibliográficos
Autores principales: Tulina, Natalia A, Borisenko, Ivan Yu, Ivanov, Andrey A, Ionov, Andrey M, Shmytko, Ivan M
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2013
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3756730/
https://www.ncbi.nlm.nih.gov/pubmed/24010042
http://dx.doi.org/10.1186/2193-1801-2-384

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3756730/
https://www.ncbi.nlm.nih.gov/pubmed/24010042
http://dx.doi.org/10.1186/2193-1801-2-384

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