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Oxygen doping of HTSC and resistive switching in HTSC-based heterostructures
ABSTRACT: The studies of the bipolar resistive switching effect in thin film heterojunctions (YBa(2)Cu(3)O(7−δ)/Ag) and (Nd (2−x)Ce(x)CuO(4−y)/Ag) have exhibited the role of oxygen as a doping element in hole- and electron-doped HTSC compounds.
Autores principales: | Tulina, Natalia A, Borisenko, Ivan Yu, Ivanov, Andrey A, Ionov, Andrey M, Shmytko, Ivan M |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer International Publishing
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3756730/ https://www.ncbi.nlm.nih.gov/pubmed/24010042 http://dx.doi.org/10.1186/2193-1801-2-384 |
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