Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO(2) blocking layer

This study characterizes the charge storage characteristics of metal/HfO(2)/Au nanocrystals (NCs)/SiO(2)/Si and significantly improves memory performance and retention time by annealing the HfO(2) blocking layer in O(2) ambient at 400°C. Experimental evidence shows that the underlying mechanism can...

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Detalles Bibliográficos
Autores principales: Tang, Ruifan, Huang, Kai, Lai, Hongkai, Li, Cheng, Wu, Zhiming, Kang, Junyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765817/
https://www.ncbi.nlm.nih.gov/pubmed/23984794
http://dx.doi.org/10.1186/1556-276X-8-368

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765817/
https://www.ncbi.nlm.nih.gov/pubmed/23984794
http://dx.doi.org/10.1186/1556-276X-8-368

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