Cargando…
Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO(2) blocking layer
This study characterizes the charge storage characteristics of metal/HfO(2)/Au nanocrystals (NCs)/SiO(2)/Si and significantly improves memory performance and retention time by annealing the HfO(2) blocking layer in O(2) ambient at 400°C. Experimental evidence shows that the underlying mechanism can...
Autores principales: | Tang, Ruifan, Huang, Kai, Lai, Hongkai, Li, Cheng, Wu, Zhiming, Kang, Junyong |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765817/ https://www.ncbi.nlm.nih.gov/pubmed/23984794 http://dx.doi.org/10.1186/1556-276X-8-368 |
Ejemplares similares
-
In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO(2)/TiN Structure for CMOS Applications
por: Xu, Da-Peng, et al.
Publicado: (2017) -
Gadolinium oxide nanocrystal nonvolatile memory with HfO(2)/Al(2)O(3 )nanostructure tunneling layers
por: Wang, Jer-Chyi, et al.
Publicado: (2012) -
Synthesis of freestanding HfO(2 )nanostructures
por: Kidd, Timothy, et al.
Publicado: (2011) -
Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
por: Zhang, Wei, et al.
Publicado: (2017) -
Morphology and Photoluminescence of HfO(2)Obtained by
Microwave-Hydrothermal
por: Eliziário, SA, et al.
Publicado: (2009)