InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 10(5) to 10(10) cm(−2) by simply manipulating V/III rati...

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Detalles Bibliográficos
Autores principales: Li, Senlin, Chen, Qingqing, Sun, Shichuang, Li, Yulian, Zhu, Qiangzhong, Li, Juntao, Wang, Xuehua, Han, Junbo, Zhang, Junpei, Chen, Changqing, Fang, Yanyan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765830/
https://www.ncbi.nlm.nih.gov/pubmed/23984719
http://dx.doi.org/10.1186/1556-276X-8-367

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765830/
https://www.ncbi.nlm.nih.gov/pubmed/23984719
http://dx.doi.org/10.1186/1556-276X-8-367

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