Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al(2)O(3)) film for passivation on the whole surface...

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Detalles Bibliográficos
Autores principales: Kato, Shinya, Kurokawa, Yasuyoshi, Miyajima, Shinsuke, Watanabe, Yuya, Yamada, Akira, Ohta, Yoshimi, Niwa, Yusuke, Hirota, Masaki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765971/
https://www.ncbi.nlm.nih.gov/pubmed/23968156
http://dx.doi.org/10.1186/1556-276X-8-361

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765971/
https://www.ncbi.nlm.nih.gov/pubmed/23968156
http://dx.doi.org/10.1186/1556-276X-8-361

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