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Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition
To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al(2)O(3)) film for passivation on the whole surface...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765971/ https://www.ncbi.nlm.nih.gov/pubmed/23968156 http://dx.doi.org/10.1186/1556-276X-8-361 |
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author | Kato, Shinya Kurokawa, Yasuyoshi Miyajima, Shinsuke Watanabe, Yuya Yamada, Akira Ohta, Yoshimi Niwa, Yusuke Hirota, Masaki |
author_facet | Kato, Shinya Kurokawa, Yasuyoshi Miyajima, Shinsuke Watanabe, Yuya Yamada, Akira Ohta, Yoshimi Niwa, Yusuke Hirota, Masaki |
author_sort | Kato, Shinya |
collection | PubMed |
description | To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al(2)O(3)) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al(2)O(3)-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al(2)O(3) and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al(2)O(3) deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays. |
format | Online Article Text |
id | pubmed-3765971 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-37659712013-09-10 Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition Kato, Shinya Kurokawa, Yasuyoshi Miyajima, Shinsuke Watanabe, Yuya Yamada, Akira Ohta, Yoshimi Niwa, Yusuke Hirota, Masaki Nanoscale Res Lett Nano Express To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al(2)O(3)) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al(2)O(3)-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al(2)O(3) and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al(2)O(3) deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays. Springer 2013-08-23 /pmc/articles/PMC3765971/ /pubmed/23968156 http://dx.doi.org/10.1186/1556-276X-8-361 Text en Copyright ©2013 Kato et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Kato, Shinya Kurokawa, Yasuyoshi Miyajima, Shinsuke Watanabe, Yuya Yamada, Akira Ohta, Yoshimi Niwa, Yusuke Hirota, Masaki Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
title | Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
title_full | Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
title_fullStr | Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
title_full_unstemmed | Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
title_short | Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
title_sort | improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765971/ https://www.ncbi.nlm.nih.gov/pubmed/23968156 http://dx.doi.org/10.1186/1556-276X-8-361 |
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