Cargando…
Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition
To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) high-quality aluminum oxide (Al(2)O(3)) film for passivation on the whole surface...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765971/ https://www.ncbi.nlm.nih.gov/pubmed/23968156 http://dx.doi.org/10.1186/1556-276X-8-361 |