Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity depen...

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Detalles Bibliográficos
Autores principales: Koivisto, Juha, Kiljunen, Timo, Wolff, Jan, Kortesniemi, Mika
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Oxford University Press 2013
Materias:
Technology
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3766287/
https://www.ncbi.nlm.nih.gov/pubmed/23520268
http://dx.doi.org/10.1093/jrr/rrt015

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3766287/
https://www.ncbi.nlm.nih.gov/pubmed/23520268
http://dx.doi.org/10.1093/jrr/rrt015

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