Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates

A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatm...

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Detalles Bibliográficos
Autores principales: Shcherbachev, Kirill, Privezentsev, Vladimir, Kulikauskas, Vaclav, Zatekin, Vladimir, Saraykin, Vladimir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
X-Ray Diffraction and Imaging
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769058/
https://www.ncbi.nlm.nih.gov/pubmed/24046492
http://dx.doi.org/10.1107/S0021889813010169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769058/
https://www.ncbi.nlm.nih.gov/pubmed/24046492
http://dx.doi.org/10.1107/S0021889813010169

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