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Characterization of SiGe thin films using a laboratory X-ray instrument

The technique of reciprocal space mapping using X-rays is a recognized tool for the nondestructive characterization of epitaxial films. X-ray scattering from epitaxial Si(0.4)Ge(0.6) films on Si(100) substrates using a laboratory X-ray source was investigated. It is shown that a laboratory source wi...

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Detalles Bibliográficos
Autores principales: Ulyanenkova, Tatjana, Myronov, Maksym, Benediktovitch, Andrei, Mikhalychev, Alexander, Halpin, John, Ulyanenkov, Alex
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769059/
https://www.ncbi.nlm.nih.gov/pubmed/24046495
http://dx.doi.org/10.1107/S0021889813010492