Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in...

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Detalles Bibliográficos
Autores principales: Bussone, Genziana, Schott, Rüdiger, Biermanns, Andreas, Davydok, Anton, Reuter, Dirk, Carbone, Gerardina, Schülli, Tobias U., Wieck, Andreas D., Pietsch, Ullrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
X-Ray Diffraction and Imaging
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769061/
https://www.ncbi.nlm.nih.gov/pubmed/24046493
http://dx.doi.org/10.1107/S0021889813004226

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769061/
https://www.ncbi.nlm.nih.gov/pubmed/24046493
http://dx.doi.org/10.1107/S0021889813004226

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