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Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in...

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Detalles Bibliográficos
Autores principales:	Bussone, Genziana, Schott, Rüdiger, Biermanns, Andreas, Davydok, Anton, Reuter, Dirk, Carbone, Gerardina, Schülli, Tobias U., Wieck, Andreas D., Pietsch, Ullrich
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	International Union of Crystallography 2013
Materias:	X-Ray Diffraction and Imaging
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769061/ https://www.ncbi.nlm.nih.gov/pubmed/24046493 http://dx.doi.org/10.1107/S0021889813004226

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