Crack propagation and fracture in silicon wafers under thermal stress

The behaviour of microcracks in silicon during thermal annealing has been studied using in situ X-ray diffraction imaging. Initial cracks are produced with an indenter at the edge of a conventional Si wafer, which was heated under temperature gradients to produce thermal stress. At temperatures wher...

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Detalles Bibliográficos
Autores principales: Danilewsky, Andreas, Wittge, Jochen, Kiefl, Konstantin, Allen, David, McNally, Patrick, Garagorri, Jorge, Elizalde, M. Reyes, Baumbach, Tilo, Tanner, Brian K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
X-Ray Diffraction and Imaging
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769070/
https://www.ncbi.nlm.nih.gov/pubmed/24046487
http://dx.doi.org/10.1107/S0021889813003695

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769070/
https://www.ncbi.nlm.nih.gov/pubmed/24046487
http://dx.doi.org/10.1107/S0021889813003695

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