Atomic Scale Verification of Oxide-Ion Vacancy Distribution near a Single Grain Boundary in YSZ

This study presents atomic scale characterization of grain boundary defect structure in a functional oxide with implications for a wide range of electrochemical and electronic behavior. Indeed, grain boundary engineering can alter transport and kinetic properties by several orders of magnitude. Here...

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Detalles Bibliográficos
Autores principales: An, Jihwan, Park, Joong Sun, Koh, Ai Leen, Lee, Hark B., Jung, Hee Joon, Schoonman, Joop, Sinclair, Robert, Gür, Turgut M., Prinz, Fritz B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3775093/
https://www.ncbi.nlm.nih.gov/pubmed/24042150
http://dx.doi.org/10.1038/srep02680

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3775093/
https://www.ncbi.nlm.nih.gov/pubmed/24042150
http://dx.doi.org/10.1038/srep02680

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