Quantum Conductance in Silicon Oxide Resistive Memory Devices

Resistive switching offers a promising route to universal electronic memory, potentially replacing current technologies that are approaching their fundamental limits. In many cases switching originates from the reversible formation and dissolution of nanometre-scale conductive filaments, which const...

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Detalles Bibliográficos
Autores principales: Mehonic, A., Vrajitoarea, A., Cueff, S., Hudziak, S., Howe, H., Labbé, C., Rizk, R., Pepper, M., Kenyon, A. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3776960/
https://www.ncbi.nlm.nih.gov/pubmed/24048282
http://dx.doi.org/10.1038/srep02708

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3776960/
https://www.ncbi.nlm.nih.gov/pubmed/24048282
http://dx.doi.org/10.1038/srep02708

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