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Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy
Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-depen...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3782881/ https://www.ncbi.nlm.nih.gov/pubmed/24067783 http://dx.doi.org/10.1038/srep02757 |