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Origin of easy magnetization switching in magnetic tunnel junctions with voltage-controlled interfacial anisotropy

Spin-polarized currents represent an efficient tool for manipulating ferromagnetic nanostructures but the critical current density necessary for the magnetization switching is usually too high for applications. Here we show theoretically that, in magnetic tunnel junctions having electric-field-depen...

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Detalles Bibliográficos
Autor principal:	Pertsev, Nikolay A.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2013
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3782881/ https://www.ncbi.nlm.nih.gov/pubmed/24067783 http://dx.doi.org/10.1038/srep02757

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