Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This stud...

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Detalles Bibliográficos
Autores principales: Mani, R. G., Kriisa, A., Wegscheider, W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3782888/
https://www.ncbi.nlm.nih.gov/pubmed/24067264
http://dx.doi.org/10.1038/srep02747

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3782888/
https://www.ncbi.nlm.nih.gov/pubmed/24067264
http://dx.doi.org/10.1038/srep02747

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