Reversible insulator-metal transition of LaAlO(3)/SrTiO(3) interface for nonvolatile memory

We report a new type of memory device based on insulating LaAlO(3)/SrTiO(3) (LAO/STO) hetero-interface. The microstructures of the LAO/STO interface are characterized by Cs-corrected scanning transmission electron microscopy, which reveals the element intermixing at the interface. The inhomogeneous...

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Detalles Bibliográficos
Autores principales: Lu, Hong-Liang, Liao, Zhi-Min, Zhang, Liang, Yuan, Wen-Tao, Wang, Yong, Ma, Xiu-Mei, Yu, Da-Peng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3792417/
https://www.ncbi.nlm.nih.gov/pubmed/24100438
http://dx.doi.org/10.1038/srep02870

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3792417/
https://www.ncbi.nlm.nih.gov/pubmed/24100438
http://dx.doi.org/10.1038/srep02870

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