Electromechanics in MoS(2) and WS(2): nanotubes vs. monolayers

The transition-metal dichalcogenides (TMD) MoS(2) and WS(2) show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD...

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Detalles Bibliográficos
Autores principales: Ghorbani-Asl, Mahdi, Zibouche, Nourdine, Wahiduzzaman, Mohammad, Oliveira, Augusto F., Kuc, Agnieszka, Heine, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3797429/
https://www.ncbi.nlm.nih.gov/pubmed/24129919
http://dx.doi.org/10.1038/srep02961

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3797429/
https://www.ncbi.nlm.nih.gov/pubmed/24129919
http://dx.doi.org/10.1038/srep02961

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