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Electromechanics in MoS(2) and WS(2): nanotubes vs. monolayers

The transition-metal dichalcogenides (TMD) MoS(2) and WS(2) show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD...

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Detalles Bibliográficos
Autores principales:	Ghorbani-Asl, Mahdi, Zibouche, Nourdine, Wahiduzzaman, Mohammad, Oliveira, Augusto F., Kuc, Agnieszka, Heine, Thomas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2013
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3797429/ https://www.ncbi.nlm.nih.gov/pubmed/24129919 http://dx.doi.org/10.1038/srep02961

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