Solution processed molecular floating gate for flexible flash memories

Solution processed fullerene (C(60)) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophtha...

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Detalles Bibliográficos
Autores principales: Zhou, Ye, Han, Su-Ting, Yan, Yan, Huang, Long-Biao, Zhou, Li, Huang, Jing, Roy, V. A. L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3813938/
https://www.ncbi.nlm.nih.gov/pubmed/24172758
http://dx.doi.org/10.1038/srep03093

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3813938/
https://www.ncbi.nlm.nih.gov/pubmed/24172758
http://dx.doi.org/10.1038/srep03093

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