Substrate effects on the strain relaxation in GaN/AlN short-period superlattices

We present a comparative study of the strain relaxation of GaN/AlN short-period superlattices (SLs) grown on two different III-nitride substrates introducing different amounts of compensating strain into the films. We grow by plasma-assisted molecular beam epitaxy (0001)-oriented SLs on a GaN buffer...

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Detalles Bibliográficos
Autores principales: Kladko, Vasyl, Kuchuk, Andrian, Lytvyn, Petro, Yefanov, Olexandr, Safriuk, Nadiya, Belyaev, Alexander, Mazur, Yuriy I, DeCuir, Eric A, Ware, Morgan E, Salamo, Gregory J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3814589/
https://www.ncbi.nlm.nih.gov/pubmed/22672771
http://dx.doi.org/10.1186/1556-276X-7-289

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3814589/
https://www.ncbi.nlm.nih.gov/pubmed/22672771
http://dx.doi.org/10.1186/1556-276X-7-289

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