Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitat...

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Detalles Bibliográficos
Autores principales: Honsho, Yoshihito, Miyakai, Tomoyo, Sakurai, Tsuneaki, Saeki, Akinori, Seki, Shu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3822380/
https://www.ncbi.nlm.nih.gov/pubmed/24212382
http://dx.doi.org/10.1038/srep03182

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3822380/
https://www.ncbi.nlm.nih.gov/pubmed/24212382
http://dx.doi.org/10.1038/srep03182

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