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Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon
The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical d...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3827834/ https://www.ncbi.nlm.nih.gov/pubmed/24273470 http://dx.doi.org/10.1007/s11468-013-9582-2 |