Individual Zn(2)SnO(4)-sheathed ZnO heterostructure nanowires for efficient resistive switching memory controlled by interface states

Resistive switching (RS) devices are widely believed as a promising candidate for next generation nonvolatile resistance random access memory. Here, Zn(2)SnO(4)-sheathed ZnO core/shell heterostructure nanowires were constructed through a polymeric sol–gel approach followed by post-annealing. The bac...

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Detalles Bibliográficos
Autores principales: Cheng, Baochang, Ouyang, Zhiyong, Chen, Chuan, Xiao, Yanhe, Lei, Shuijin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3832853/
https://www.ncbi.nlm.nih.gov/pubmed/24247976
http://dx.doi.org/10.1038/srep03249

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3832853/
https://www.ncbi.nlm.nih.gov/pubmed/24247976
http://dx.doi.org/10.1038/srep03249

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