Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardso...

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Detalles Bibliográficos
Autores principales: Kumar, Ashish, Arafin, Shamsul, Amann, Markus Christian, Singh, Rajendra
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3835549/
https://www.ncbi.nlm.nih.gov/pubmed/24229424
http://dx.doi.org/10.1186/1556-276X-8-481

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3835549/
https://www.ncbi.nlm.nih.gov/pubmed/24229424
http://dx.doi.org/10.1186/1556-276X-8-481

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