Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps

Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [10 [Formula: see text] 0] to infrequent [02 [Formula: see text] 3] and the surface becomes rough. No surface-related exciton emission is obs...

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Detalles Bibliográficos
Autores principales: Duan, Hongfeng, He, Haiping, Sun, Luwei, Song, Shiyan, Ye, Zhizhen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3842743/
https://www.ncbi.nlm.nih.gov/pubmed/24256997
http://dx.doi.org/10.1186/1556-276X-8-493

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3842743/
https://www.ncbi.nlm.nih.gov/pubmed/24256997
http://dx.doi.org/10.1186/1556-276X-8-493

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