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Indium-doped ZnO nanowires with infrequent growth orientation, rough surfaces and low-density surface traps
Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [10 [Formula: see text] 0] to infrequent [02 [Formula: see text] 3] and the surface becomes rough. No surface-related exciton emission is obs...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3842743/ https://www.ncbi.nlm.nih.gov/pubmed/24256997 http://dx.doi.org/10.1186/1556-276X-8-493 |