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Interface traps and quantum size effects on the retention time in nanoscale memory devices
Based on the analysis of Poisson equation, an analytical surface potential model including interface charge density for nanocrystalline (NC) germanium (Ge) memory devices with p-type silicon substrate has been proposed. Thus, the effects of P(b) defects at Si(110)/SiO(2), Si(111)/SiO(2), and Si(100)...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3847579/ https://www.ncbi.nlm.nih.gov/pubmed/23984827 http://dx.doi.org/10.1186/1556-276X-8-369 |