Interface properties of SiO(x)N(y) layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation

SiO(x)N(y) films with a low nitrogen concentration (< 4%) have been prepared on Si substrates at 400°C by atmospheric-pressure plasma oxidation-nitridation process using O(2) and N(2) as gaseous precursors diluted in He. Interface properties of SiO(x)N(y) films have been investigated by analyzing...

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Detalles Bibliográficos
Autores principales: Zhuo, Zeteng, Sannomiya, Yuta, Kanetani, Yuki, Yamada, Takahiro, Ohmi, Hiromasa, Kakiuchi, Hiroaki, Yasutake, Kiyoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3847991/
https://www.ncbi.nlm.nih.gov/pubmed/23634872
http://dx.doi.org/10.1186/1556-276X-8-201

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3847991/
https://www.ncbi.nlm.nih.gov/pubmed/23634872
http://dx.doi.org/10.1186/1556-276X-8-201

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