Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials

Improved switching characteristics were obtained from high-κ oxides AlO(x), GdO(x), HfO(x), and TaO(x) in IrO(x)/high-κ(x)/W structures because of a layer that formed at the IrO(x)/high-κ(x) interface under external positive bias. The surface roughness and morphology of the bottom electrode in these...

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Detalles Bibliográficos
Autores principales: Prakash, Amit, Maikap, Siddheswar, Banerjee, Writam, Jana, Debanjan, Lai, Chao-Sung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3848679/
https://www.ncbi.nlm.nih.gov/pubmed/24011235
http://dx.doi.org/10.1186/1556-276X-8-379

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3848679/
https://www.ncbi.nlm.nih.gov/pubmed/24011235
http://dx.doi.org/10.1186/1556-276X-8-379

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