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Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials
Improved switching characteristics were obtained from high-κ oxides AlO(x), GdO(x), HfO(x), and TaO(x) in IrO(x)/high-κ(x)/W structures because of a layer that formed at the IrO(x)/high-κ(x) interface under external positive bias. The surface roughness and morphology of the bottom electrode in these...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3848679/ https://www.ncbi.nlm.nih.gov/pubmed/24011235 http://dx.doi.org/10.1186/1556-276X-8-379 |