Metal-assisted chemical etching of Ge(100) surfaces in water toward nanoscale patterning

We propose the metal-assisted chemical etching of Ge surfaces in water mediated by dissolved oxygen molecules (O(2)). First, we demonstrate that Ge surfaces around deposited metallic particles (Ag and Pt) are preferentially etched in water. When a Ge(100) surface is used, most etch pits are in the s...

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Detalles Bibliográficos
Autores principales: Kawase, Tatsuya, Mura, Atsushi, Dei, Katsuya, Nishitani, Keisuke, Kawai, Kentaro, Uchikoshi, Junichi, Morita, Mizuho, Arima, Kenta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3848777/
https://www.ncbi.nlm.nih.gov/pubmed/23547763
http://dx.doi.org/10.1186/1556-276X-8-151

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3848777/
https://www.ncbi.nlm.nih.gov/pubmed/23547763
http://dx.doi.org/10.1186/1556-276X-8-151

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