Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs

The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. The depletion of 2DEG by the donor-like surface states is shown. The drain current collapse is found to be...

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Detalles Bibliográficos
Autores principales: Yu, Chen-hui, Luo, Qing-zhou, Luo, Xiang-dong, Liu, Pei-sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Hindawi Publishing Corporation 2013
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3852575/
https://www.ncbi.nlm.nih.gov/pubmed/24348195
http://dx.doi.org/10.1155/2013/931980

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3852575/
https://www.ncbi.nlm.nih.gov/pubmed/24348195
http://dx.doi.org/10.1155/2013/931980

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