Improvement of optical transmittance and electrical properties for the Si quantum dot-embedded ZnO thin film

A Si quantum dot (QD)-embedded ZnO thin film is successfully fabricated on a p-type Si substrate using a ZnO/Si multilayer structure. Its optical transmittance is largely improved when increasing the annealing temperature, owing to the phase transformation from amorphous to nanocrystalline Si QDs em...

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Detalles Bibliográficos
Autores principales: Kuo, Kuang-Yang, Liu, Chuan-Cheng, Huang, Pin-Ruei, Hsu, Shu-Wei, Chuang, Wen-Ling, Chen, You-Jheng, Lee, Po-Tsung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3854540/
https://www.ncbi.nlm.nih.gov/pubmed/24148255
http://dx.doi.org/10.1186/1556-276X-8-439

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3854540/
https://www.ncbi.nlm.nih.gov/pubmed/24148255
http://dx.doi.org/10.1186/1556-276X-8-439

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